Cissoid Gate Driver

CISSOID at NAC Semi · Power management

Gate Drivers

Explore gate-driver boards, evaluation kits, driver ICs and isolated interfaces for high-temperature power electronics. Compare product roles and temperature ratings, then open a product page for detailed specifications and ordering information.

12 product familiesBoards & evaluation kitsDriver ICs & interfaces
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Compare Product Families

Board ambient-temperature ratings and IC junction-temperature ratings describe different operating limits. Check the selected product page for supply requirements, target power modules and isolation conditions.

12 gate-driver and interface families
CMT-TIT0697Gate-driver board−40°C to +125°CBoard ambient
CMT-TIT8243Gate-driver board−40°C to +125°CBoard ambient
CMT-TIT8244Gate-driver board−40°C to +125°CBoard ambient
CMT-HADES2PPrimary-side controller−55°C to +175°CIC junction
CMT-HADES2SSecondary-side driver−55°C to +175°CIC junction
EVK-HADES®1210Evaluation kitQualified for operation up to 175°CBoard ambient
CHT-HADES2PPrimary-side controller−55°C to +225°CIC junction
CHT-HADES2SSecondary-side driver−55°C to +225°CIC junction
HYPERIONHalf-bridge driver−55°C to +225°CIC junction
ATLASPower transistor driver−55°C to +225°CSee product datasheet
THEMISDriver controller−55°C to +225°CIC junction
RHEAIsolated transceiver−55°C to +225°CIC junction
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Product Families

Gate-driver board

CMT-TIT0697

  • Target power module: Wolfspeed CAB450M12XM3, 1200 V / 450 A
  • Operating ambient temperature: −40°C to +125°C
  • Maximum bus voltage: 1200 V
  • Isolation test voltage: 3600 VAC RMS at 50 Hz for 1 minute
  • Creepage / clearance: 14 mm / 12 mm
  • Switching frequency: Up to 100 kHz, subject to gate-load and power limits
  • Supply voltage: 12 to 18 V
  • Gate-drive voltages: +15 V / −4 V nominal
  • Control interface: RS422 PWM inputs; open-drain fault outputs
  • Protection: UVLO, active Miller clamping, desaturation detection, soft shutdown and gate-source short-circuit protection
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Gate-driver board

CMT-TIT8243

  • Target power module: 62 mm SiC MOSFET module, 1200 V / 300 A
  • Operating ambient temperature: −40°C to +125°C
  • Maximum bus voltage: 1200 V
  • Isolation test voltage: 3600 VAC RMS at 50 Hz for 1 minute
  • Creepage / clearance: 14 mm / 12 mm
  • Switching frequency: Up to 100 kHz, subject to gate-load and power limits
  • Supply voltage: 12 to 18 V
  • Gate-drive voltages: +20 V / −5 V nominal
  • Control interface: RS422 PWM inputs; open-drain fault outputs
  • Protection: UVLO, active Miller clamping, desaturation detection, soft shutdown and gate-source short-circuit protection
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Gate-driver board

CMT-TIT8244

  • Target power module: 62 mm SiC MOSFET module, 1700 V / 300 A
  • Operating ambient temperature: −40°C to +125°C
  • Maximum bus voltage: 1700 V
  • Isolation test voltage: 3600 VAC RMS at 50 Hz for 1 minute
  • Creepage / clearance: 14 mm / 12 mm
  • Switching frequency: Up to 100 kHz, subject to gate-load and power limits
  • Supply voltage: 12 to 18 V
  • Gate-drive voltages: +20 V / −5 V nominal
  • Control interface: RS422 PWM inputs; open-drain fault outputs
  • Protection: UVLO, active Miller clamping, desaturation detection, soft shutdown and gate-source short-circuit protection
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Primary-side controller

CMT-HADES2P

  • Operating junction temperature: −55°C to +175°C
  • Supply voltage: 10 to 16.5 V
  • DC-DC controller: Current-mode flyback with integrated switching transistor
  • Typical flyback switching frequency: 180 kHz
  • Local regulator: 5 V
  • PWM input levels: 5 to 15 V; hysteresis and configurable spike filtering
  • Isolated communication: OOK modulation; two transmit and two receive channels
  • Transmit data rate: Up to 2 Mbit/s per channel
  • Fault management: Configurable UVLO, cycle-by-cycle current limit and dual open-drain fault outputs
  • Package: Plastic PQFP44
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Secondary-side driver

CMT-HADES2S

  • Operating junction temperature: −55°C to +175°C
  • Supply voltage: 5 to 30 V
  • Peak output current: 12 A at 125°C; 9 A at 175°C
  • Maximum PWM frequency: 1 MHz
  • Typical propagation delay: 160 ns
  • Typical rise / fall time: 30 ns with a 1 nF load
  • Control interface: Isolated OOK interface or standard PWM / FAULT interface
  • Protection: Soft shutdown, UVLO, desaturation detection and overtemperature protection
  • Active Miller clamping: Requires an external MOSFET
  • Package: Plastic PQFP44
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Evaluation kit

EVK-HADES®1210

  • Power stage: Half-bridge with two NEPTUNE SiC MOSFETs
  • Maximum bus voltage: 1200 V
  • Application current: Up to 10 A
  • Board dimensions: 68 × 54 mm
  • Board ambient temperature: Qualified for operation up to 175°C
  • CISSOID active-component rating: −55°C to +225°C junction temperature
  • PCB material: Polyimide, rated 200°C
  • Short temperature excursions: Up to 225°C for testing only, as described in the product brief
  • Channel control: Independent channels or locally generated non-overlap delay
  • Design documentation: Electrical schematic, bill of materials and Gerber files
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Primary-side controller

CHT-HADES2P

  • Operating junction temperature: −55°C to +225°C
  • Supply voltage: 10 to 16.5 V
  • DC-DC controller: Current-mode flyback with integrated switching transistor
  • Typical flyback switching frequency: 180 kHz
  • Local regulator: 5 V
  • PWM input levels: 5 to 15 V; hysteresis and configurable spike filtering
  • Isolated communication: OOK modulation; two transmit and two receive channels
  • Transmit data rate: Up to 2 Mbit/s per channel
  • Fault management: Configurable UVLO, cycle-by-cycle current limit and dual open-drain fault outputs
  • Package options: Ceramic CQFP32; potential good die
  • Channel timing: Configurable local non-overlap management
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Secondary-side driver

CHT-HADES2S

  • Operating junction temperature: −55°C to +225°C
  • Supply voltage: 5 to 30 V
  • Peak output current: 12 A at 125°C; 8 A at 225°C
  • Maximum PWM frequency: 1 MHz
  • Typical propagation delay: 160 ns
  • Typical rise / fall time: 30 ns with a 1 nF load
  • Control interface: Isolated OOK interface or standard PWM / FAULT interface
  • Protection: Soft shutdown, UVLO, desaturation detection and overtemperature protection
  • Active Miller clamping: Requires an external MOSFET
  • Package: Ceramic CQFP32
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Half-bridge driver

HYPERION

  • Operating junction temperature: −55°C to +225°C
  • Output configuration: High-side and low-side N-channel MOSFET drive
  • High-side boost capability: Up to 50 V; refer to the datasheet for individual pin limits
  • Peak output current: In excess of 1 A
  • Typical output on-resistance: 1 Ω
  • Typical propagation delay: 40 ns at 200°C with a 1 nF load
  • Typical transition time: 15 ns at 200°C with a 1 nF load
  • Bootstrap diode: Integrated
  • Switching control: Adaptive non-overlap, output enable, low-side disable and crowbar
  • Protection: High-side undervoltage lockout
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Power transistor driver

ATLAS

  • Operating temperature: −55°C to +225°C
  • Supply voltage: 5 to 30 V
  • Driver channels: Two independent push-pull channels
  • Source / sink current: 2 A per channel
  • Current scaling: Higher-current designs use parallel channels and additional ATLAS ICs; 20 A is not a single-channel rating
  • Power-device compatibility: Normally-on and normally-off devices, including JFETs, MOSFETs, BJTs and IGBTs
  • Fault turn-off: Soft-shutdown capability
  • Package: Ceramic SOIC28
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Driver controller

THEMIS

  • Operating junction temperature: −55°C to +225°C
  • Supply with internal regulator: 7 to 30 V
  • Supply with regulator bypassed: 4.75 to 5.25 V
  • Driver expansion: Controls up to five CHT-ATLAS ICs
  • System gate-current capability: Up to ±20 A using the external ATLAS driver stage
  • Local regulator: Integrated 5 V linear regulator
  • Undervoltage lockout: Adjustable threshold and hysteresis
  • Fault detection: Desaturation detection
  • Active Miller clamping: Predriver for an external transistor
  • Pulse generation: Predriver support for normally-off SiC JFETs
  • Package: Ceramic SOIC28
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Isolated transceiver

RHEA

  • Operating junction temperature: −55°C to +225°C
  • Channel configuration: Two transmit and two receive channels
  • Data rate: Up to 2 Mbit/s per channel
  • Maximum transmission delay: 100 ns
  • Maximum jitter: 21 ns RMS, cycle-to-cycle
  • Supply voltage: 5 V
  • Common-mode transient immunity: 50 kV/µs
  • Isolation implementation: External pulse transformer per digital signal; complete link uses two RHEA ICs
  • Modulation: On-off keying with programmable modulation frequency
  • Package: Ceramic SOIC28
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